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| www..com SFF15N80/3 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SOLID STATE DEVICES, INC. 15 AMPS 800 VOLTS 0.60 S N-CHANNEL POWER MOSFET TO-3 DESIGNER'S DATA SHEET FEATURES: * Low RDS (on) and High Transconductance * Excellent High Temperature Stability * Fast Switching Speed * Intrinsic Rectifier * Hermetically Sealed Package * TX, TXV, and Space Level Screening Available MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation PACKAGE OUTLINE: TO-3 PIN OUT: DRAIN: SOURCE: GATE: CASE PIN 2 PIN 1 SYMBOL VDSS VGS ID Top & Tstg R2JC @ TC = 25oC PD VALUE 800 20 15 -55 to +150 0.42 300 UNIT Volts Volts Amps o C o C/W Watts NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0006C www..com SFF15N80/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS = 0 V, ID = 3mA) Drain to Source ON State Resistance (VGS = 10 V, ID = 7.5A) Gate Threshold Voltage (VDS = VGS, ID = 4mA) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V) Gate to Source Leakage Forward (VGS = 20V, VDS = 0V) SYMBOL BVDSS RDS(on) VGS(th) TA = 25oC TA = 125oC IDSS IGSS VGS = 0 Volts VDS = 25 Volts f =1 MHz VGS = 10 V VDS = 400V ID = 7.5A VGS = 10V VDD = 400V ID = 7.5A RG = 2 S Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VSD IF = 15A, VR = 100V di/dt = 100A/:sec trr MIN 800 - TYP - MAX 0.65 UNIT V S V :A nA 2.0 3965 315 73 - 128 30 55 20 33 63 32 - 4.5 250 1000 100 4870 395 120 155 45 80 50 50 100 50 1.50 800 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forvard Voltage (IS = 15A, VGS = 0V, TJ = 25oC) Diode Reverse Recovery Time NOTES: pF nC nsec V nsec |
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